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		Company Profile Quality Policy Statement GCS History Business Contact Technology Overview GaAs & GaN RF Technologies InGaP HBT High Linearity InGaP HBT High Voltage and GSM InGaP HBT VCO InGaP HBT Super High ƒmax HBT GaAs pHEMT 0.5um D-Mode T-Gate pHEMT 0.5um Switch pHEMT 0.25um E/D-Mode LN pHEMT 0.25um D-Mode T-Gate pHEMT Power Process 0.15um Low-Noise & Power pHEMTs HFET GaN/SiC HEMT Integrated Passive Devices THz Schottky Diode Varactor Diode InP HBT Technologies GaN/SiC HEMT Technologies BAW Technologies Optoelectronics Technologies Foundry Services GaAs & GaN RF Wafer Foundry InP HBT Wafer Foundry OPTOELECTRONICS Wafer Foundry Customer Proprietary Process Manufacturing Manufacturing Capabilities Processing Capabilities Testing Capabilities Foundry Support Foundry Support Flow MPW Support Process Design Kit CAD Tools and Support Testing Services Foundry Training Foundry Partners GaAs & InGaAs PIN Photodetectors & Arrays APD VCSEL Chips & Arrays Sales Rep Financials Monthly Sales Quarterly Sales Financial Reports Annual Reports Shareholder Services Stock Quote Contact Investor Conference TSE Market Observation Post System (MOPS) Corporate Governance Board of Directors Audit and Compensation Committee
Pure-play Wafer Foundry   Pure-play Wafer Foundry Technology Overview GaAs & GaN RF Technologies InGaP HBT Super High ƒmax HBT GaAs pHEMT HFET GaN/SiC HEMT Integrated Passive Devices THz Schottky Diode Varactor Diode InP HBT Technologies GaN/SiC HEMT Technologies BAW Technologies Optoelectronics Technologies Foundry Services   Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies>Super High fmax HBT   Super High ƒmax HBT       mmW HBT Process with Super High-ƒmax GaAs based HBT with ƒmax Performance Close to InP HBT Technology Super High ƒmax>140 GHz Ideal for mmW 5G PA, Low Phase Noise Amplifiers and Gain Blocks mmW Frequency Voltage Control Oscillators (VCO) Integrated Schottky and Varactor Diodes Available Typical Applications: mmW 5G PA @ 28 GHz Low Phase Noise Amplifiers Low Phase Noise VCO Transceiver MMIC Components Features: ƒmax >140 GHz Low 1/f Noise Corner Frequency Two Processes to Choose from (SD1, SPC) Ideal for mmW MMIC mmW 5G PA mmW Frequency VCO Low Phase Noise Amplifiers Typical Parametric Data Parameters Unit SD2 SPC Current Gain @ 1kA/cm2 90.0 70.0 Vbe-on @ 2A/cm2 V 1.11 1.11 Vce-Offset @ Ib=100uA V 0.12 0.12 BVbeo @ 2A/cm2 V 6.6 6.5 BVceo @ 2A/cm3 V 8.5 13.0 BVcbo @ 2A/cm4 V 20.0 24.0 Re (2x6um Device) Ohm 6.0 6.0 Peak ƒT GHz 80 62 Peak ƒmax GHz 140 150 Schottky Diode fco THz 1.6 1.6 Varactor Tuning Ratio 2.5:1 -- ƒT / ƒmax vs. Jc SD2 LP Data@18GHz (1.2x20um2 Vcc=3V) SPD LP Data@30GHz (1.2x20um2 Vcc=5V)