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		Company Profile Quality Policy Statement GCS History Business Contact Technology Overview GaAs & GaN RF Technologies InGaP HBT High Linearity InGaP HBT High Voltage and GSM InGaP HBT VCO InGaP HBT Super High ƒmax HBT GaAs pHEMT 0.5um D-Mode T-Gate pHEMT 0.5um Switch pHEMT 0.25um E/D-Mode LN pHEMT 0.25um D-Mode T-Gate pHEMT Power Process 0.15um Low-Noise & Power pHEMTs HFET GaN/SiC HEMT Integrated Passive Devices THz Schottky Diode Varactor Diode InP HBT Technologies GaN/SiC HEMT Technologies BAW Technologies Optoelectronics Technologies Foundry Services GaAs & GaN RF Wafer Foundry InP HBT Wafer Foundry OPTOELECTRONICS Wafer Foundry Customer Proprietary Process Manufacturing Manufacturing Capabilities Processing Capabilities Testing Capabilities Foundry Support Foundry Support Flow MPW Support Process Design Kit CAD Tools and Support Testing Services Foundry Training Foundry Partners GaAs & InGaAs PIN Photodetectors & Arrays APD VCSEL Chips & Arrays Sales Rep Financials Monthly Sales Quarterly Sales Financial Reports Annual Reports Shareholder Services Stock Quote Contact Investor Conference TSE Market Observation Post System (MOPS) Corporate Governance Board of Directors Audit and Compensation Committee
Pure-play Wafer Foundry   Pure-play Wafer Foundry Technology Overview GaAs & GaN RF Technologies InP HBT Technologies GaN/SiC HEMT Technologies BAW Technologies Optoelectronics Technologies Foundry Services   Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies> GaN/SiC HEMT   BAW Technologies       BAW Filter Process AlN and ScAlN BAW Resonator Technology Ideal for High Performance RF Filters in Mobile Communication Systems Low Cost and High Volume Manufacturing Wafer Level Packaging (WLP) Available Typical Applications Commercial: 4G LTE, Sub-6 GHz 5G, WiFi-6E, WiFi-7 Filters Defense/Aerospace: X-band Filter Process Features Unique patent-protected BAW process AlN resonators for narrowband filters: Keff2 of 6% Q-factor up to 3000 Frequency up to 8 GHz ScAlN resonators for wideband filters: Keff2 of 20% Q-factor up to 1800 Frequency up to 7.5 GHz Frequency trimming accuracy: +/- 0.1% High power-handling capabilities: 45 dBm at 2.5 GHz 35 dBm at 5 GHz Wafer level packaging Resonator Performance 2.4 GHz ScAlN Demonstration Filter 5.7 GHz ScAlN Demonstration Filter