Serving the RFIC/MMIC industry, GCS offers a wide portfolio of process technologies such as InGaP HBT, InP HBT, pHEMT, HFET, GaN HEMT, THz Mixer Diode and Integrated Passive Devices (IPD) to enhance our customers’ product performance and market competitiveness. A family of InGaP HBT processes are in production, each tailored to provide an optimum performance (high power and superior linearity) for a unique application in the cellular handset, wireless communication and base station markets.
Several GaAs HEMT foundry processes are also in production for applications from low cost handset switches, PAs and LNA up to 40GHz, to high linearity an high power PAs. GaN-on-Silicon process for high power RF PAs is also qualified for production.
Technology |
Process |
Application |
GaN HEMT |
0.4 um GaN/SiC |
Wideband High Power Amplfier |
0.25 um GaN/SiC |
High Frequency High Power Amplfier, Sub-6 GHz MIMO |
0.15 um GaN/SiC |
mmW Frequency Amplifier, up to Ka-Band |
(6") 0.25 um GaN/Si |
Wideband PA for Low-Voltage Mobile, BTS & Phase Array Tx IC Up to K-Band |
(6") 0.15 GaN/Si |
PA for Phase Array Tx IC up to 30 GHz |
Super-High ƒmax HBT |
SD2 and SPD |
mmW 5G Amplfiers (ex 14 GHz, 28 GHz, 39 GHz) |
InGaP HBT |
P2 |
High Linearity for Handset and WLAN PAs |
P3 |
High Linearity/high gain for Handset/802.11ac/ 5G PAs |
P5 |
High Ruggedness for GSM/DCS PAs |
P7 |
Small Cell Infrastructure PAs |
D1 |
Low Phase Noise VCO |
D5 |
Wide tuning range Low Phase Noise VCO, Voltage Tunable MMIC Filters |
InP HBT |
DHBT1 |
High-Voltage Analog and RF ICs |
DHBT2 |
Super-high-speed ICs |
DHBT3 |
DHBT5 |
5G PA at mm-wave Frequency |
GaAs pHEMT |
0.5 um Power pHEMT |
PA and LNA up to 20GHz |
E/D-Mode pHEMT |
Integrated Multifunction ICs |
0.25 um Power pHEMT |
Amplifiers up to 40 GHz |
0.25 um Low Noise pHEMT |
Low Noise Receiver up to Ka-Band |
0.1 um LN/Power pHEMT |
Low Noise & Power Amplifier |
0.5 um HFET |
High Linearity for WiMAX and Infrastructure PAs |
0.25 um HFET |
RF Diodes |
THz |
Low Loss Mixer up to mmW Frequencies |
Varactor |
Wide Capacitance Tuning Range For 5G Beam Forming Network |
RFPIN |
RF Switches |
RF Passives |
High-Q LCR on GaAs |
Filter and Matching/Bias Network |
BAW Filter |
6" BAW Resonator (AlN and ScAlN) |
High Performance RF Filter up to 10 GHz |