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GCS History
   
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Month/Year
Milestones
8/1997
GCS USA founded in Torrance, California
12/1998
Successfully developed InGaP HBT technologies
7/1999
Signed InGaP HBT technology license agreement with Anadigics
10/1999
ISO 9001-2000 certified
5/2000
Successfully developed GaAs PIN Photodiodes
6/2000
Signed PHEMT PA production agreement with Celeritek
4/2001
Successfully developed high voltage InGaP HBT technology
8/2001
Successfully developed InP HBT technology
12/2001
Successfully developed InGaAs PIN Photodiodes
4/2003
Started PHEMT Switch technology in mass production
7/2003
Started optoelectronics wafer foundry services
3/2004
Successfully developed the world fastest InP HBT technology with Ft > 300 GHz for 40-100G TIA and high speed Ics
6/2004
Qualified GSM PA by a US IDM company
1/2006
Signed process and product transfer agreement with WJ Communication
1/2006
WJ Communication process and product transfer agreement and foundry agreement
6/2008
Began GaN wafer foundry services
10/2009
Signed technology transfer and foundry agreement with a US IDM company on GaN RF technology
11/2010
Established GCS Holdings, Inc. in Cayman Island
7/2011
Signed a wafer foundry agreement to manufacture SiC based products
6/2013
Delivered space qualified HBT MMIC to a Tier one customer
7/2013
Signed a Technology and licence agreement with MACOM on GCS's GAN/SiC technologies