Month/Year |
Milestones |
8/1997 |
Global Communication Semiconductors, Inc. ("GCS. C") was established and set up a facility in Torrance, CA, USA. |
12/1998 |
Successfully developed the InGaP HBT technique. |
10/1999 |
Passed ISO 9001-2000 certification. |
5/2000 |
Successfully developed GaAs PIN Photodiode. |
4/2001 |
Successfully developed the high voltage InGaP HBT technique. |
8/2001 |
Successfully developed the InP HBT technique. |
12/2001 |
Successfully developed InGaAs PIN Photodiodes. |
4/2003 |
Mass production of RF0.5µM pHEMT Switch. |
3/2004 |
Successfully
developed the world's fastest InP HBT technique (Ft > 300 GHz) that could
be applied to optical communication 40-100G Trans-impedance Amplifier (TIA) and
high-speed test equipment IC. |
8/2008 |
Commenced GaAs concentrated photovoltaic solar battery foundry. |
11/2010 |
Attained contracts for technology transfer from world-class silicon foundry for multiple
InGaP HBT and pHEMT techniques. |
11/2010 |
GCS Holdings, Inc., was established in the Cayman Islands. |
12/2010 |
GCS Holdings, Inc. undertook share conversion with GCS, C. |
1/2011 |
GCS. C became known as Global Communication Semiconductors, LLC ("GCS LLC"). |
2/2011 |
Attained R&D proposal for GaN from a major international IDM. |
8/2011 |
Successfully transferred multiple GaAs HBT and pHEMT techniques to world-class
silicon foundry company. |
10/2011 |
Successfully certified for GaN/Si high-power RF components from a U.S. company. |
2/2012 |
Received order from a major international IDM plant for HBT for satellite
communications. |
2/2013 |
Successfully developed high voltage InGaP HBT P7 process for the next generation of
small cell base station. |
2/2013 |
Successful certified for SiC power electric component processes from customer. |
3/2013 |
Successfully developed wide band VCO HBT. |
7/2013 |
Contracted with a U.S. company for GaN on SiC technology. |
8/2013 |
Developed Super Low Noise E/D pHEMT for WLAN, GPS, DBS, and VSAT. |
9/2013 |
Successfully developed high-gain, high-efficiency and high-linearity InGaP HBT for
802.11ac and 3G/4G handsets. |
3/2014 |
Successfully developed high-frequency and higher-breakdown-strength 0.15μm GaN on
SiC technology and HEMT technology. |
9/2014 |
Officially listed on the Taipei Exchange. |
3/2015 |
Successfully developed low-loss millimeter-wave monolithic mixer diode. |
4/2015 |
Established Global Device Technologies, Co., Ltd. |
6/2015 |
Successfully developed high-performance Bulk Acoustic Wave Resonator. |
8/2015 |
Mass produced 25G 1310-1550nm PIN (25G 1310-1550nm InGaAs/InP PIN PD). |
10/2015 |
Mass produced 25G 850nm GaAs PIN PD. |
12/2015 |
Successfully developed high-speed, low-loss planar RF PIN diode. |
12/2015 |
Completed Opto foundry process developments on 100G/400G InP-PIC and INP/Si-PIC). |
3/2016 |
The Company's board of directors passed resolution to merge with SAIC Acquisition,
Inc., a 100% owned subsidiary of San'an Optoelectronics Co., Ltd. |
7/2016 |
Mass produced SiC JFET. |
8/2016 |
The Company's board of directors terminates the merger agreement with San'an
Optoelectronics Co., Ltd. on the merger with SAIC Acquisition, Inc. |
9/2016 |
Begins 6-inch VCSEL wafer fab foundry service. |
11/2016 |
Entered into joint-venture agreement with San'an Optoelectronics Co., Ltd. under which
a joint-venture company Xiamen Global Advanced Semiconductor Co., Ltd., which the
Company owns 49%, was established. |
7/2017 |
GCS LLC acquires 100% shares of D-Tech Optoelectronics, Inc. in cash. |
6/2018 |
The Company's board of directors passed resolution to acquire 2% of Xiamen Global
Advanced Semiconductor Co., Ltd. from San'an Optoelectronics Co., Ltd. and increase
the Company's ownership to 51%. |
9/2018 |
Xiamen Global Advanced Semiconductor Co., Ltd. became a subsidiary of the Company. |
