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Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies> GaN/SiC HEMT |
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0.25/0.4/0.15µm GaN HEMT Process
- Wide band-gap GaN HEMT
- A Combination of high power density, high efficiency, and wide bandwidth
- Ideal for 5G wireless infrastructure and radar applications (PA and switches)
- 15, 28, 48, and 85V PA operations
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Typical Applications:
- 5G wireless infrastructures
- Amplifiers with DPD for FDD, TDD conditions
- Military/commercial radar
- Military electronic warfare (EW)
- 5G Doherty amplifier
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Features:
- 0.15/0.25/0.4 µm T-Gate lithography - with source/gate field plates
- Psat: ~6 W/mm @ Vds = 28 V
- Psat: ~11 W/mm @ Vds = 48 V
- High drain efficiency: > 80%
- High breakdown voltage: > 200 V
- Excellent thermal conductivity
- Options of round or slot through-wafer vias
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| Typical GaN Device Performance:
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| Parameter
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0.15um
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0.4um
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0.25um
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| Imax (mA/mm)
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1150
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1190
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1200
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| Idss(mA/mm)
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910
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730
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750
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| Gm (mS/mm)
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343
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300
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330
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| Vp (V)
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-3
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-2.6
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-2.4
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| BVgd (V)
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80
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>200
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>150
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| MAG @ 2.0 GHz (dB)
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16
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>24
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>26
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| ƒT(GHz)
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42
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19
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23
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| ƒmax(GHz)
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170
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62
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100
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| Pout (W/mm)@3.5 GHz,Vds-48V
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N/A
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13.5
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11.0
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| PAE(%)@3.5GHz, Vds-48V
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N/A
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81.0
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79
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| Pout (W/mm)@15 GHz,Vds-28V
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N/A
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N/A
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4.0
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| PAE(%)@15GHz, Vds-28V
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N/A
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N/A
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45
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| Pout (W/mm)@10 GHz,Vds-48V
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N/A
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10.3
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10.8
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| Max. Drain Eff. (%) @10 GHz,Vds-48V
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N/A
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57
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65
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| Nfmin@10 GHz -28V
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N/A
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1.15dB
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1.1dB
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| MXP Psat (W/mm) @ 18GHz, Vds = 28V
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5
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N/A
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N/A
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| MXE PAE (%) @ 18GHz, Vds = 28V
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60
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N/A
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N/A
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| MXP Psat (W/mm) @ 30GHz, Vds = 28V
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4.6
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N/A
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N/A
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| MXE PAE (%) @ 30GHz, Vds = 28V
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49
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N/A
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N/A
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| NFmin (dB) @ 18GHz, Vds = 20V
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0.77
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N/A
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N/A
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| *Measured at 2 GHz
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| 0.15um GaN/SiC HEMT:
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| 0.25um GaN/SiC HEMT: |
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| 0.4um GaN/SiC HEMT: |
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| Available Round & Slot Through Wafer Vias:
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