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		Company Profile Quality Policy Statement GCS History Business Contact Technology Overview GaAs & GaN RF Technologies InGaP HBT High Linearity InGaP HBT High Voltage and GSM InGaP HBT VCO InGaP HBT Super High ƒmax HBT GaAs pHEMT 0.5um D-Mode T-Gate pHEMT 0.5um Switch pHEMT 0.25um E/D-Mode LN pHEMT 0.25um D-Mode T-Gate pHEMT Power Process 0.15um Low-Noise & Power pHEMTs HFET GaN/SiC HEMT Integrated Passive Devices THz Schottky Diode Varactor Diode InP HBT Technologies GaN/SiC HEMT Technologies BAW Technologies Optoelectronics Technologies Foundry Services GaAs & GaN RF Wafer Foundry InP HBT Wafer Foundry OPTOELECTRONICS Wafer Foundry Customer Proprietary Process Manufacturing Manufacturing Capabilities Processing Capabilities Testing Capabilities Foundry Support Foundry Support Flow MPW Support Process Design Kit CAD Tools and Support Testing Services Foundry Training Foundry Partners GaAs & InGaAs PIN Photodetectors & Arrays APD VCSEL Chips & Arrays Sales Rep Financials Monthly Sales Quarterly Sales Financial Reports Annual Reports Shareholder Services Stock Quote Contact Investor Conference TSE Market Observation Post System (MOPS) Corporate Governance Board of Directors Audit and Compensation Committee
Pure-play Wafer Foundry   Pure-play Wafer Foundry Technology Overview GaAs & GaN RF Technologies InP HBT Technologies GaN/SiC HEMT Technologies BAW Technologies Optoelectronics Technologies Foundry Services   Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies> GaN/SiC HEMT   GaN/SiC HEMT       0.25/0.4/0.15µm GaN HEMT Process Wide band-gap GaN HEMT A Combination of high power density, high efficiency, and wide bandwidth Ideal for 5G wireless infrastructure and radar applications (PA and switches) 15, 28, 48, and 85V PA operations Typical Applications: 5G wireless infrastructures Amplifiers with DPD for FDD, TDD conditions Military/commercial radar Military electronic warfare (EW) 5G Doherty amplifier Features: 0.15/0.25/0.4 µm T-Gate lithography - with source/gate field plates Psat: ~6 W/mm @ Vds = 28 V Psat: ~11 W/mm @ Vds = 48 V High drain efficiency: > 80% High breakdown voltage: > 200 V Excellent thermal conductivity Options of round or slot through-wafer vias Typical GaN Device Performance: Parameter 0.15um 0.4um 0.25um Imax (mA/mm) 1150 1190 1200 Idss(mA/mm) 910 730 750 Gm (mS/mm) 343 300 330 Vp (V) -3 -2.6 -2.4 BVgd (V) 80 >200 >150 MAG @ 2.0 GHz (dB) 16 >24 >26 ƒT(GHz) 42 19 23 ƒmax(GHz) 170 62 100 Pout (W/mm)@3.5 GHz,Vds-48V N/A 13.5 11.0 PAE(%)@3.5GHz, Vds-48V N/A 81.0 79 Pout (W/mm)@15 GHz,Vds-28V N/A N/A 4.0 PAE(%)@15GHz, Vds-28V N/A N/A 45 Pout (W/mm)@10 GHz,Vds-48V N/A 10.3 10.8 Max. Drain Eff. (%) @10 GHz,Vds-48V N/A 57 65 Nfmin@10 GHz -28V N/A 1.15dB 1.1dB MXP Psat (W/mm) @ 18GHz, Vds = 28V 5 N/A N/A MXE PAE (%) @ 18GHz, Vds = 28V 60 N/A N/A MXP Psat (W/mm) @ 30GHz, Vds = 28V 4.6 N/A N/A MXE PAE (%) @ 30GHz, Vds = 28V 49 N/A N/A NFmin (dB) @ 18GHz, Vds = 20V 0.77 N/A N/A *Measured at 2 GHz 0.15um GaN/SiC HEMT: 0.25um GaN/SiC HEMT: 0.4um GaN/SiC HEMT: Available Round & Slot Through Wafer Vias: