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		Company Profile Quality Policy Statement GCS History Business Contact Technology Overview GaAs & GaN RF Technologies InGaP HBT High Linearity InGaP HBT High Voltage and GSM InGaP HBT VCO InGaP HBT Super High ƒmax HBT GaAs pHEMT 0.5um D-Mode T-Gate pHEMT 0.5um Switch pHEMT 0.25um E/D-Mode LN pHEMT 0.25um D-Mode T-Gate pHEMT Power Process 0.15um Low-Noise & Power pHEMTs HFET GaN/SiC HEMT Integrated Passive Devices THz Schottky Diode Varactor Diode InP HBT Technologies GaN/SiC HEMT Technologies BAW Technologies Optoelectronics Technologies Foundry Services GaAs & GaN RF Wafer Foundry InP HBT Wafer Foundry OPTOELECTRONICS Wafer Foundry Customer Proprietary Process Manufacturing Manufacturing Capabilities Processing Capabilities Testing Capabilities Foundry Support Foundry Support Flow MPW Support Process Design Kit CAD Tools and Support Testing Services Foundry Training Foundry Partners GaAs & InGaAs PIN Photodetectors & Arrays APD VCSEL Chips & Arrays Sales Rep Financials Monthly Sales Quarterly Sales Financial Reports Annual Reports Shareholder Services Stock Quote Contact Investor Conference TSE Market Observation Post System (MOPS) Corporate Governance Board of Directors Audit and Compensation Committee
Pure-play Wafer Foundry   Pure-play Wafer Foundry Technology Overview GaAs & GaN RF Technologies InGaP HBT Super High ƒmax HBT GaAs pHEMT 0.5um D-Mode T-Gate pHEMT 0.5um Switch pHEMT 0.25um E/D-mode LN pHEMT 0.25um D-Mode T-Gate pHEMT Power Process 0.15um Low-Noise & Power pHEMTs HFET GaN/SiC HEMT Integrated Passive Devices THz Schottky Diode Varactor Diode InP HBT Technologies GaN/SiC HEMT Technologies BAW Technologies Optoelectronics Technologies Foundry Services   Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies> Varactor Diode   0.1µm Low-Noise & Power pHEMTs​       EBL Gate Lithography Ideal for mmW Transceiver Components Suitable for Commercial and A&D Applications Meets or Exceeds Environmental Requirements For Applications up to Ka-Band: Transceiver Components High Power Amplifiers Low Noise Amplifiers Gain Blocks Switches Features: EBL Gate Lithography Excellent Reliability Backside Round & Slot Via Process Hot Via Process High Level MMIC Implementation Typical Device Performance: Parameter LN Power Imax (mA/mm) 440 430 Idss (mA/mm) 220 322 Gm (mS/mm) 430 383 Vp(V) -0.5 -1.03 BVgd (V) >7 >16 ƒT (GHz) 80 58 ƒmax (GHz) 170 >210 P_density (mW/mm) N/A 630 NFmin @ 6 GHz [dB] 0.4 0.49 Gass @ 6 GHz [dB] 17.7 14.8 NFmin @ 12 GHz [dB] 0.47 0.76 Gass @ 12 GHz [dB] 12.5 10.9 NFmin @ 18 GHz [dB] 0.55 0.98 Gass @ 18 GHz [dB] 11.0 9.3 NFmin @ 30 GHz [dB]* 1.2 N/A Gass @ 30 GHz [dB]* 9.0 N/A * extrapolated 0.1µm Power pHEMT Process: 0.1µm LN pHEMT Process: