HFET

0.5um HFET offers excellent linearity and power density for wireless communication amplifiers that require super high linearity. A linearity figure of merit (IP3-P1dB) of 20 dB can be achieved. Design kits, models and samples are available upon request. Excellent reliability with an MTTF of 2.95E+9 hours are achieved. This process has been qualified and in production since 2005.

Example of HFET Performance at 5 GHz:

Wg = 600um
Frequency = 5 GHz, 1 MHz spacing
IP3 measured at + 8 dBm/tone

Ids	80mA (~50% Idss)
Vds	5V	8V
I'S	0.6717<-168.03	0.2968<132.70
I'L	0.1425<65.66	0.3150<107.44
Gain (dB)	11	13
IP3 (dBm)	41.5	42.8
P1dB (dBm)	22	25.5
IP3-P1dB (dB)	19.5	17.3
IP3 / Pdc	35.3	29.8

Ids	100mA (~60% Idss)
Vds	5V	8V
I'S	0.3916<175.44	0.2182<179.58
I'L	0.3016<122.84	0.1491<42.36
Gain (dB)	12.5	12.8
IP3 (dBm)	42.2	43
P1dB (dBm)	22.8	26
IP3-P1dB (dB)	19.4	17
IP3 / Pdc	33.2	24.9

HFET Performance at 2 GHz:

	2400um HFET Eval Board
Ids	325
%Idss	50
Vds	8
IP3 (dBm)	47.5
P1dB (dBm)	30
IP3-P1dB (dB)	17.5
IP3 / Pdc	21.6

	4800um HFET Eval Board
Ids	545
%Idss	42
Vds	7
IP3 (dBm)	50.5
P1dB (dBm)	33
IP3-P1dB (dB)	17.5
IP3 / Pdc	25.7