High Linearity InGaP HBT (P1&P2) processes with high ruggedness at the same time have been developed specifically for battery-powered high linearity power amplifier applications. High Linearity Power Amplifiers with superior performance and reliability have been demonstrated by customers for Infrastructure gain blocks, CDMA/WCDMA/TD-SCDMA, WiFi and WiMAX. Both processes have been in mass production since 2001.
Parameter |
Typical (25 deg. C) |
Frequency
(GHz) |
3.3 |
3.8 |
Gain
(dB) |
32 |
30 |
Gain
Variation (dB/deg. C) |
0.04 |
0.035 |
Input
Return Loss (dB) |
10 |
15 |
Output
Return Loss (dB) |
13 |
10 |
P1dB
(dBm) |
30 |
30.5 |
Psat
(dBm) |
32 |
32 |
Output
Third Order Intercept (dBm) |
45 |
45 |
Noise
Figure |
5.8 |
6 |
Supply
Current (mA) |
615 |
615 |
Control
Current (mA) |
4 |
4 |
Switching
Speed: ton, toff (nS) |
20 |
20 |
