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GaAs & GaN RF Wafer Foundry
InP HBT Wafer Foundry
Optoelectronics Wafer Foundry
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InP HBT Wafer Foundry
   
 
InP HBT Wafer Foundry InP HBT Wafer Foundry InP HBT Wafer Foundry

 

GCS offers InP HBT processes, which enable very high speed mixed-signal ICs both for test instruments and for 40-100G Transimpedance Amplifiers (TIAs) used in optical fiber communication applications. Two generations (2 processes) of InP HBT technologies have been developed with Ft from 180 GHz to 300 GHz. Superior performance has been demonstrated by customers and qualified products have been in production since 2007.