0.25um D-Mode T-Gate PHEMT Power Process

This 0.25um low cost D-Mode T-Gate process has been developed using low cost optical stepper lithography for transceiver components of up to 40 GHz and also for high operating voltage.

Download PDF

GCS’ 0.25um T-Gate PHEMT features:

Low-cost optical stepper lithography process
Extremely high fmax (>200GHz)
Very high breakdown voltage (>20V)

Small Signal Performance

f_T > 60 GHz
f_max > 200 GHz
G_max > 15 dB at 40 GHz

Device Parameters	Typical Values
Idss @Vgs=2V	270mA/mm
Imax @Vgs=0.9V	500mA/mm
Vp @Ids=1mA/mm	-1V
Gm @Vgs=-0.3V	330mS/mm
BVgd @Igd=1mA/mm	>20V