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首頁 > 專業晶圓製造服務 > 專業技術 > GaAs & GaN RF Technologies > THz Schottky Diode |
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Monolithic THz Mixer Diode
- Schottky Diodes with fco >1 THz and Four Different Barrier Heights
- Choice of stand-alone diode or MMIC Implementation
- Eliminates unwanted parasitics with monolithic integration
- Low conversion loss mm-wave mixer up to W-band
- Meets or exceeds most environmental test requirements
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Process Features:
- Planar diode process
- Ideality factor of 1.1
- Choice of turn-on voltage (0.3, 0.5, 0.65, and 0.85V)
- Passive thin-film resistor, MIM capacitor and transmission lines
- Air-bridge or polyimide interconnect options
- Backside via option available
- Mature manufacturing process
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Applications:
- Low conversion loss mixers
- Up/down-converters for up to W-Band
- Low LO drive mixer with single, multiple, series or anti-parallel diode configurations
- Monolithically integrated options:
- Passive matching and filtering networks
- HBT or pHEMT integrated circuits
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| Electrical Characteristics:
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| Forward I-V Characteristics (1.6x8 mm2 diode):
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| W-band Up Converter:
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| Mixer Linearity:
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