| HBT Parameters |
|
SHBT |
DHBT1 |
DHBT2 |
DHBT3 |
| Emitter Size |
|
1umx3um |
1umx3um |
0.8umx3um |
0.8umx3um |
| Typical operating current density |
Jc(typ) |
1mA/mm2 |
1 mA/mm2 |
2 mA/mm2 |
2 mA/mm2 |
| Maximum operating current density |
Jc(max) |
2 mA/mm2 |
2 mA/mm2 |
3 mA/mm2 |
3 mA/mm2 |
| Typical operating voltage |
Vce |
1 V |
1.5V |
1.5 V |
1 V |
| Base-collector breakdown voltage |
BVcbo |
4 V |
8 V |
5.5 V |
4.5 V |
| Collector-emitter breakdown voltage |
BVceo |
3.5 V |
7 V |
4.5 V |
3.8 V |
| Emitter-base breakdown voltage |
BVebo |
2 V |
2 V |
2 V |
2 V |
| Thermal resistance |
Rth |
9.9°C/mW |
5.3°C/mW |
5.3°C/mW |
5.3°C/mW |
| fT (at Max allowed operating current) |
|
180GHz |
150 GHz |
250 GHz |
300 GHz |
| fmax (at Max allowed operating current) |
|
180 GHz |
150 GHz |
240 GHz |
250 GHz |
For very high speed mixed-signal ICs for test instruments and and 40-100G Transimpedance Amplifier (TIA) for optical fiber communication applications, two generations (5 processes) of InP HBT technologies have been developed with Ft from 110 GHz to 330 GHz. Superior performance has been demonstrated by customers and several has been in production since 2007.
