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專業晶圓製造服務
專業技術
專業技術總覽
GaAs & GaN RF Technologies
GaAs PHEMT
GaN HEMT
Integrated Passive Devices
THz Schottky Diode
InP HBT Technologies
GaN Power Electronics Technologies
Optoelectronics Technologies
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GaAs & GaN RF Technologies
   
 

Serving the RFIC/MMIC industry, GCS offers a wide portfolio of process technologies such as InGaP HBT, InP HBT, pHEMT, GaN HEMT, THz Mixer Diode and Integrated Passive Devices (IPD) to enhance our customers’ product performance and market competitiveness. A family of InGaP HBT processes are in production, each tailored to provide an optimum performance (high power and superior linearity) for a unique application in the cellular handset, wireless communication and base station markets.

Several GaAs HEMT foundry processes are also in production for applications from low cost handset switches, PAs and LNA up to 40GHz, to high linearity an high power PAs. GaN-on-Silicon process for high power RF PAs is also qualified for production. Please contact our foundry for our GaN/Si data sheet.

 

Technology Process Application
GaN HEMT 0.4um GaN/SiC Wideband High Power Amplfier
0.25um GaN/SiC High Frequency High Power Amplifier, Sub-6 GHz MIMO
0.15um GaN/SiC mmW Frequency Amplifier, up to Ka-Band
0.25um GaN/Si (6" Wafer) Wideband PA for Low-Voltage Mobile, BTS & Phase Array Tx IC Up to K-Band
0.15um GaN/Si (6" Wafer) PA for Phase Array Tx IC up to 30 GHz
Super-High fmax HBT SD1 and SPC mmW 5G Amplifiers (ex 14 GHz, 28 GHz, 39 GHz)
InGaP HBT D1 Low Phase Noise VCO
D5 Wide tuning range Low Phase Noise VCO, Voltage Tunable MMIC Filters
InP HBT DHBT1 High-Voltage Analog and RF ICs
DHBT2 Super-high-speed ICs
DHBT3
DHBT5 5G PA at mm-wave Frequency
(Coming soon) DHBT_400 Ultra High Ft>400 GHz
GaAs pHEMT 0.5um Power PA and LNA up to 20 GHz
E/D-Mode pHEMT Integrated Multifunction ICs
0.25um Power Amplifiers up to 40 GHz
0.25um Low Noise mmW Low Noise Receiver up to Ka-Band
0.1um LN/Power Low Noise & Power Amplifier
RF Diodes THz Schottky Diode Low Loss Mixer up to mmW Frequencies
Varactor Junction Diode Wide Capacitance Tuning Range For 5G Beam Forming Network
RFPIN RF Switches
RF Passives High-Q LCR on GaAs Filter and Matching/Bias Network
BAW Filter 6" Wafer BAW Resonator (AlN and ScAlN) High Performance RF Filter up to 12 GHz