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Serving the RFIC/MMIC industry, GCS offers a wide portfolio of process technologies such as InGaP HBT, InP HBT, PHEMT, GaN HEMT, THz Mixer Diode and Integrated Passive Devices (IPD) to enhance our customers’ product performance and market competitiveness. A family of five (5) InGaP HBT processes are in production, each tailored to provide an optimum performance (high power and superior linearity) for a unique application in the cellular handset, wireless communication and base station markets.
Several GaAs HEMT foundry processes are also in production for applications from low cost handset switches, PAs and LNA up to 40GHz, to high linearity an high power PAs. GaN-on-Silicon process for high power RF PAs is also qualified for production.
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Technology
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Process
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Application
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GaN HEMT
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0.4um GaN/SiC
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Wideband High Power Amplfier
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0.25um GaN/SiC
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High Frequency High Power Amplifier, Sub-6 GHz MIMO
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0.15um GaN/SiC
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mmW Frequency Amplifier, up to Ka-Band
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0.25um GaN/Si (6" Wafer) <
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Wideband PA for Low-Voltage Mobile, BTS & Phase Array Tx IC Up to K-Band
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0.15um GaN/Si (6" Wafer)
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PA for Phase Array Tx IC up to 30 GHz
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Super-High fmax HBT
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SD1 and SPC
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mmW 5G Amplifiers (ex 14 GHz, 28 GHz, 39 GHz)
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InGaP HBT
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D1
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Low Phase Noise VCO
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D5
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Wide tuning range Low Phase Noise VCO, Voltage Tunable MMIC Filters
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InP HBT
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DHBT1
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High-Voltage Analog and RF ICs
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DHBT2
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Super-high-speed ICs
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DHBT3
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DHBT5
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5G PA at mm-wave Frequency
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(Coming soon) DHBT_400
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Ultra High Ft>400 GHz
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GaAs pHEMT
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0.5um Power
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PA and LNA up to 20 GHz
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E/D-Mode pHEMT
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Integrated Multifunction ICs
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0.25um Power
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Amplifiers up to 40 GHz
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0.25um Low Noise
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mmW Low Noise Receiver up to Ka-Band
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0.1um LN/Power
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Low Noise & Power Amplifier
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RF Diodes
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THz Schottky Diode
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Low Loss Mixer up to mmW Frequencies
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Varactor Junction Diode
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Wide Capacitance Tuning Range For 5G Beam Forming Network
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RFPIN
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RF Switches
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RF Passives
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High-Q LCR on GaAs
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Filter and Matching/Bias Network
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BAW Filter
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6" Wafer BAW Resonator (AlN and ScAlN)
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High Performance RF Filter up to 12 GHz
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