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		公司簡介 品質政策聲明 環宇沿革 業務聯繫 專業技術 專業技術總覽 GaAs & GaN RF Technologies InGaP HBT High Linearity InGaP HBT High Voltage and GSM InGaP HBT VCO InGaP HBT GaAs PHEMT 0.5um D-Mode T-Gate PHEMT 0.5um Switch PHEMT 0.5um E/D-mode PHEMT 0.25um D-Mode T-Gate PHEMT Power Process HFET GaN HEMT Integrated Passive Devices THz Schottky Diode InP HBT Technologies GaN Power Electronics Technologies GaN Technologies Optoelectronics Technologies 晶圓製造服務 GaAs & GaN RF Wafer Foundry InP HBT Wafer Foundry OPTOELECTRONICS Wafer Foundry Customer Proprietary Process Manufacturing Manufacturing Capabilities Processing Capabilities Testing Capabilities Foundry Support Foundry Support Flow MPW Support Process Design Kit CAD Tools and Support Testing Services Foundry Training Foundry Partners 砷化鎵及砷化銦鎵光探測器與光探測器陣列 雪崩光電二極管 垂直腔表面發射激光器（VCSEL）晶片及晶片陣列 業務代表 財務資訊 每月營業額報告 每季營業額報告 歷年財務報表 公司年報 股東服務 股價查詢 聯絡人 法說會 台灣證券交易所公開資訊觀測站 (MOPS) 公司治理 董事會 審計及薪酬委員會
Pure-play Wafer Foundry   Pure-play Wafer Foundry Technology Overview GaAs & GaN RF Technologies InP HBT Technologies GaN/SiC HEMT Technologies BAW Technologies Optoelectronics Technologies Foundry Services   Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies> GaN/SiC HEMT   BAW Technologies       BAW Filter Process AlN and ScAlN BAW Resonator Technology Ideal for High Performance RF Filters in Mobile Communication Systems Low Cost and High Volume Manufacturing Applications Commercial: 4G LTE, Sub-6 GHz 5G, WiFi-6E, WiFi-7 Filters Defense/Aerospace: X-band Filter Process Features Unique patent-protected BAW process AlN resonators for narrowband filters: Keff2 of 6% Q-factor up to 3000 Frequency up to 8 GHz ScAlN resonators for wideband filters: Keff2 up to 12% Q-factor up to 1800 Frequency up to 8 GHz Frequency trimming accuracy: +/- 0.1% High power-handling capabilities: 45 dBm at 2.5 GHz 35 dBm at 5 GHz Resonator Performance 2.4 GHz ScAlN Demonstration Filter 4.9 GHz ScAlN Demonstration Filter PDK for Easy Design