Site Map | English / 繁中 / 简中
   
  Pure-play Wafer Foundry
 
Pure-play Wafer Foundry
Technology
Overview
GaAs & GaN RF Technologies
InGaP HBT
GaAs PHEMT
HFET
GaN HEMT
Integrated Passive Devices
THz Schottky Diode
InP HBT Technologies
GaN Power Electronics Technologies
Optoelectronics Technologies
Foundry Services
  Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies> THz Schottky Diode
 
THz Schottky Diode
   
 
Monolithic THz Mixer Diode
  • Super low barrier Schottky Diode with fco >1 THz
  • Choice of stand-alone diode or MMIC Implementation
  • Eliminates unwanted parasitics with monolithic integration
  • Low conversion loss mm-wave mixer up to W-band
  • Meets or exceeds most environmental test requirements

Process Features:
  • Planar diode process
  • Ideality factor of 1.1
  • Choice of turn-on voltage (0.3, 0.5, 0.65, and 0.85V)
  • Passive thin-film resistor, MIM capacitor and transmission lines
  • Air-bridge or polyimide interconnect options
  • Backside via option available
  • Mature manufacturing process

Applications:
  • Low conversion loss mixers
  • Up/down-converters for up to W-Band
  • Low LO drive mixer with single, multiple, series or anti-parallel diode configurations
  • Monolithically integrated options:
    • Passive matching and filtering networks
    • HBT or PHEMT integrated circuits

Electrical Characteristics:

Forward I-V Characteristics (1.6x8 mm2 diode):

W-band Up Converter:

Mixer Linearity: