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  Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies > HFET
 
HFET
   
  0.5um HFET Process

0.5um HFET offers excellent linearity and power density for wireless communication amplifiers that require super high linearity. A linearity figure of merit (IP3-P1dB) of 20 dB can be achieved. Design kits, models and samples are available upon request. Excellent reliability with an MTTF of 2.95E+9 hours are achieved. This process has been qualified and in production since 2005.

 


Example of HFET Performance at 5 GHz:
  • Wg = 600um
  • Frequency = 5 GHz, 1 MHz spacing
  • IP3 measured at + 8 dBm/tone
Ids 80mA (~50% Idss)
Vds 5V 8V
I'S 0.6717<-168.03 0.2968<132.70
I'L 0.1425<65.66 0.3150<107.44
Gain (dB) 11 13
IP3 (dBm) 41.5 42.8
P1dB (dBm) 22 25.5
IP3-P1dB (dB) 19.5 17.3
IP3 / Pdc 35.3 29.8
Ids 100mA (~60% Idss)
Vds 5V 8V
I'S 0.3916<175.44 0.2182<179.58
I'L 0.3016<122.84 0.1491<42.36
Gain (dB) 12.5 12.8
IP3 (dBm) 42.2 43
P1dB (dBm) 22.8 26
IP3-P1dB (dB) 19.4 17
IP3 / Pdc 33.2 24.9

HFET Performance at 2 GHz:

2400um HFET
Eval Board

Ids 325
%Idss 50
Vds 8
IP3 (dBm) 47.5
P1dB (dBm) 30
IP3-P1dB (dB) 17.5
IP3 / Pdc 21.6

4800um HFET
Eval Board

Ids 545
%Idss 42
Vds 7
IP3 (dBm) 50.5
P1dB (dBm) 33
IP3-P1dB (dB) 17.5
IP3 / Pdc 25.7