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Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies>Super High fmax HBT
Super High fmax HBT
mmW HBT Process with Super High-fmax
GaAs based HBT with fmax Performance Close to InP HBT Technology Super High fmax>140 GHz
Ideal for mmW 5G PA, Low Phase Noise Amplifiers and Gain Blocks
mmW Frequency Voltage Control Oscillators (VCO)
Integrated Schottky and Varactor Diodes Available
Typical Applications:
mmW 5G PA @ 28 GHz
Low Phase Noise Amplifiers
Low Phase Noise VCO
Transceiver MMIC Components
Features:
fmax >140 GHz
Low 1/f Noise Corner Frequency
Two Processes to Choose from (SD1, SPC
Ideal for mmW MMIC
mmW 5G PA
mmW Frequency VCO
Low Phase Noise Amplifiers
Typical Parametric Data:
fT / fmax vs. Jc
LP Data @18 GHz (SPC 2x1.6x20um2 Vcc=5V)
LP Data @30 GHz (SPC 1.2x20um2 Vcc=5V)