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  Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies>Super High fmax HBT
 
Super High fmax HBT
   
 
mmW HBT Process with Super High-fmax
  • GaAs based HBT with fmax Performance Close to InP HBT Technology Super High fmax>140 GHz
  • Ideal for mmW 5G PA, Low Phase Noise Amplifiers and Gain Blocks
  • mmW Frequency Voltage Control Oscillators (VCO)
  • Integrated Schottky and Varactor Diodes Available

Typical Applications:
  • mmW 5G PA @ 28 GHz
  • Low Phase Noise Amplifiers
  • Low Phase Noise VCO
  • Transceiver MMIC Components

Features:
  • fmax >140 GHz
  • Low 1/f Noise Corner Frequency
  • Two Processes to Choose from (SD1, SPC
  • Ideal for mmW MMIC
    • mmW 5G PA
    • mmW Frequency VCO
    • Low Phase Noise Amplifiers

Typical Parametric Data:

fT / fmax vs. Jc

LP Data @18 GHz (SPC 2x1.6x20um2 Vcc=5V)

LP Data @30 GHz (SPC 1.2x20um2 Vcc=5V)