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  Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies>Super High fmax HBT
 
Super High ƒmax HBT
   
 
mmW HBT Process with Super High-ƒmax
  • GaAs based HBT with ƒmax Performance Close to InP HBT Technology Super High ƒmax>140 GHz
  • Ideal for mmW 5G PA, Low Phase Noise Amplifiers and Gain Blocks
  • mmW Frequency Voltage Control Oscillators (VCO)
  • Integrated Schottky and Varactor Diodes Available

Typical Applications:
  • mmW 5G PA @ 28 GHz
  • Low Phase Noise Amplifiers
  • Low Phase Noise VCO
  • Transceiver MMIC Components

Features:
  • ƒmax >140 GHz
  • Low 1/f Noise Corner Frequency
  • Two Processes to Choose from (SD1, SPC)
  • Ideal for mmW MMIC
    • mmW 5G PA
    • mmW Frequency VCO
    • Low Phase Noise Amplifiers

Typical Parametric Data
Parameters Unit SD2 SPC
Current Gain @ 1kA/cm2 90.0 70.0
Vbe-on @ 2A/cm2 V 1.11 1.11
Vce-Offset @ Ib=100uA V 0.12 0.12
BVbeo @ 2A/cm2 V 6.6 6.5
BVceo @ 2A/cm3 V 8.5 13.0
BVcbo @ 2A/cm4 V 20.0 24.0
Re (2x6um Device) Ohm 6.0 6.0
Peak ƒT GHz 80 62
Peak ƒmax GHz 140 150
Schottky Diode fco THz 1.6 1.6
Varactor Tuning Ratio 2.5:1 --

ƒT / ƒmax vs. Jc

SD2 LP Data@18GHz (1.2x20um2 Vcc=3V)

SPD LP Data@30GHz (1.2x20um2 Vcc=5V)