GCS has developed a wide portfolio of technologies to serve RFIC/MMIC, Power Electronics and Optoelectronics industries.
GaAs & GaN RF Technologies
Serving the RFIC/MMIC industry, GCS offers a wide portfolio of process technologies such as InGaP HBT, InP HBT, PHEMT, HFET, GaN HEMT, THz Mixer Diode and Integrated Passive Devices (IPD) to enhance our customers’ product performance and market competitiveness. A family of five (5) InGaP HBT processes are in production, each tailored to provide an optimum performance (high power and superior linearity) for a unique application in the cellular handset, wireless communication and base station markets. Several GaAs HEMT foundry processes are also in production for applications from low cost handset switches, PAs and LNA up to 40GHz, to high linearity an high power PAs. GaN-on-Silicon process for high power RF PAs is also qualified for production.
InP HBT Technologies
For very high speed mixed-signal ICs for test instruments and and 40-100G Transimpedance Amplifier (TIA) for optical fiber communication applications, two generations (4 processes) of InP HBT technologies have been in production with Ft from 180 GHz to 300 GHz. Superior performance has been demonstrated by customers and several has been in production since 2007.
GaN Power Electronics Technologies
We are developing GaN-based process technologies for power devices used in power electronics applications such as solar inverters, wind turbine, traction, UPS, motor drives and Hybrid Electric Vehicles/Full Electric Vehicles.
GCS has developed a wide range and comprehensive process module technologies in our 4” volume RFIC/MMIC production line to enable capabilities of manufacturing of numerous optoelectronics/photonics devices ranging from single photodiode (PD), PD array, laser, APD, VCSEL to complex monolithically-integrated photonics ICs.