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InGaP HBT
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  Home > Pure-play Wafer Foundry > GaAs & GaN RF Technologies > InGaP HBT > High Linearity InGaP HBT
 
InGaP HBT
   
 

GCS offers a total of four (4) power processes (P1, P2, P5 and P6) for Handset wireless, WLAN, Mobile WiMAX and Infrastructure markets. Our P1 and P2 processes are designed to achieve High Ruggedness and Superior Linearity at the same time. The P5 process featuring Unbreakable Ruggedness and High Power Efficiency at the same time was designed for GSM/EDGE power amplifier application. Several customers (including IDMs) have reported excellent VSWR >15:1 with 5V Vcc bias.



Parameter Unit P1 P3 P2 P5 P6 P7 D1 (High fT) D5
Applications   CDMA, WLAN,Linear Gain Block CDMA,
WiFi,
802.11AC, WiMAX, Linear Gain Block
CDMA, WLAN, WiMAX, Linear Gain Block GSM, Driver Amp Hi BV DriverAmp for Base Station, CATV150 12V PA, Infrastructure, Base Station PA VCO, High-speed Digital and Mixed-signal ICs Wide Tuning Range VCO
Current Gain   120 70 70 70 70 70 150 150
BVceo@ KA/cm2 V 12.5 19 13.5 18.5 23 28 7.5 6.5
BVcbo@ KA/cm2 V 23 33 23 33 45 55 17 29
fT/fmax GHz 45/55 40/87 40/58 32/60 30/65 20/70 60/65 42/55
Schottky Diode   Yes Yes Yes Yes Yes Yes Yes Yes
Performance Example   Pout = 28dBm,PAE = 65%G = 20dB,Vcc = 3.5V,Freq = 2.0 GHz,DUT = 1,700 um2 Pout = 28dBm,PAE = 65%G = 20dB,Vcc = 3.5V,Freq = 2.0 GHz,DUT = 1,700 um2 Pout = 28dBm,PAE = 65%G = 20dB,Vcc = 3.5V,Freq = 2.0 GHz,DUT = 1,700 um2 Pout = 36dBm,PAE = 70%G = 18dB,Vcc = 3.6V,Freq = 0.9 GHz,DUT = 6,900 um2 Pout = 33dBm,PAE = 70%G = 21dB,Vcc = 10V,Freq = 2.0 GHz,DUT = 1,700 um2 Pout = 30 dBmVcc = 12V DUT = 1,920 um2 VCO,fo = 4.990 to 5.154 GHzPo = 9.5Bm,PN = 105dBc/Hz@100KHz offset VCO Wide
PNE
105dBc/Hz@100KHz offset,
C/V Tuning Ratio =5 =1