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  Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies > InGaP HBT > High Voltage and GSM InGaP HBT
 
High Voltage and GSM InGaP HBT
   
 

High Voltage and GSM InGaP HBT (P5 & P6) power processes have been developed specifically for power amplifiers requiring operation at 8-10 volt bias and/or ruggedness under high VSWR conditions. GSM PA has demonstrated superior RF performance and can withstand more than 25:1 VSWR at 5V bias. Linear PA at 9V Vcc and has been demonstrated by customers for Infrastructure Driver Amplifiers. Both Processes have been in mass production since 2001.


High-Ruggedness InGaP HBT
Surpasses GSM PA’s RF Performance and Ruggedness Requirements
GSM 4W Power Cell Evaluation Board
GSM 4W Power Cell Evaluation Board
PA performance
 
 PA performance* from 5 consecutive lots
 *Measured on the evaluation board (as shown)
  • Matched to 50Ώ
  • When matched for best power fficiency, PAE ~68%
  • Plotted data were not de-embedded
  • When de-embedded to device level, PAE ~74%
  • Device ruggedness: Survived >25:1 at 5V bias