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  Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies > InGaP HBT > High Linearity InGaP HBT
 
High Linearity InGaP HBT
   
 

High Linearity InGaP HBT (P1&P2) processes with high ruggedness at the same time have been developed specifically for battery-powered high linearity power amplifier applications. High Linearity Power Amplifiers with superior performance and reliability have been demonstrated by customers for Infrastructure gain blocks, CDMA/WCDMA/TD-SCDMA, WiFi and WiMAX. Both processes have been in mass production since 2001.



P2 InGaP HBT for WiMAX 802.16 PA

Parameter

Typical (25 deg. C)

Frequency (GHz)

3.3

3.8

Gain (dB)

32

30

Gain Variation (dB/deg. C)

0.04

0.035

Input Return Loss (dB)

10

15

Output Return Loss (dB)

13

10

P1dB (dBm)

30

30.5

Psat (dBm)

32

32

Output Third Order Intercept (dBm)

45

45

Noise Figure

5.8

6

Supply Current (mA)

615

615

Control Current (mA)

4

4

Switching Speed: ton, toff (nS)

20

20