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  Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies> GaN/SiC HEMT
 
GaN/SiC HEMT
   
 
0.25/0.4/0.15µm GaN HEMT Process
  • Wide band-gap GaN HEMT
  • A Combination of high power density, high efficiency, and wide bandwidth
  • Ideal for 5G wireless infrastructure and radar applications (PA and switches)
  • 15, 28, 48, and 85V PA operations

Typical Applications:
  • 5G wireless infrastructures
  • Amplifiers with DPD for FDD, TDD conditions
  • Military/commercial radar
  • Military electronic warfare (EW)
  • 5G Doherty amplifier

Features:
  • 0.15/0.25/0.4 µm T-Gate lithography - with source/gate field plates
  • Psat: ~6 W/mm @ Vds = 28 V
  • Psat: ~11 W/mm @ Vds = 48 V
  • High drain efficiency: > 80%
  • High breakdown voltage: > 200 V
  • Excellent thermal conductivity
  • Options of round or slot through-wafer vias

Typical GaN Device Performance:
Parameter 0.15um 0.4um 0.25um
Imax (mA/mm) 1150 1190 1200
Idss(mA/mm) 910 730 750
Gm (mS/mm) 343 300 330
Vp (V) -3 -2.6 -2.4
BVgd (V) 80 >200 >150
MAG @ 2.0 GHz (dB) 16 >24 >26
ƒT(GHz) 42 19 23
ƒmax(GHz) 170 62 100
Pout (W/mm)@3.5 GHz,Vds-48V N/A 13.5 11.0
PAE(%)@3.5GHz, Vds-48V N/A 81.0 79
Pout (W/mm)@15 GHz,Vds-28V N/A N/A 4.0
PAE(%)@15GHz, Vds-28V N/A N/A 45
Pout (W/mm)@10 GHz,Vds-48V N/A 10.3 10.8
Max. Drain Eff. (%) @10 GHz,Vds-48V N/A 57 65
Nfmin@10 GHz -28V N/A 1.15dB 1.1dB
MXP Psat (W/mm) @ 18GHz, Vds = 28V 5 N/A N/A
MXE PAE (%) @ 18GHz, Vds = 28V 60 N/A N/A
MXP Psat (W/mm) @ 30GHz, Vds = 28V 4.6 N/A N/A
MXE PAE (%) @ 30GHz, Vds = 28V 49 N/A N/A
NFmin (dB) @ 18GHz, Vds = 20V 0.77 N/A N/A
*Measured at 2 GHz

0.15um GaN/SiC HEMT:

0.25um GaN/SiC HEMT:

0.4um GaN/SiC HEMT:

Available Round & Slot Through Wafer Vias: