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  Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies> GaN/SiC HEMT
 
GaN/SiC HEMT
   
 
0.25/0.4/0.5µm GaN HEMT Process
  • Wide band-gap GaN HEMT
  • A Combination of high power density, high efficiency, and wide bandwidth
  • Ideal for 5G wireless infrastructure and radar applications (PA and switches)
  • 15, 28, and 48V PA operations

Typical Applications:
  • 5G wireless infrastructures
  • Cable television (CATV)
  • Military/commercial radar
  • Military electronic warfare (EW)
  • 5G Doherty amplifier

Features:
  • 0.5/0.4/0.25 µm optical T-Gate lithography - with source/gate field plates
  • Psat: ~6 W/mm @ Vds = 28 V
  • Psat: ~11 W/mm @ Vds = 48 V
  • High drain efficiency: > 80%
  • High breakdown voltage: > 200 V
  • Excellent thermal conductivity
  • Options of round or slot through-wafer vias

Typical GaN Device Performance:


GaN/SiC RF Switch Characteristics:

Available Round & Slot Through Wafer Vias: