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GaAs & GaN RF Technologies
InGaP HBT
GaAs PHEMT
HFET
GaN HEMT
Integrated Passive Devices
THz Schottky Diode
InP HBT Technologies
GaN Power Electronics Technologies
Optoelectronics Technologies
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  Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies
 
GaAs & GaN RF Technologies
   
 

Serving the RFIC/MMIC industry, GCS offers a wide portfolio of process technologies such as InGaP HBT, InP HBT, PHEMT, HFET, GaN HEMT, THz Mixer Diode and Integrated Passive Devices (IPD) to enhance our customers’ product performance and market competitiveness. A family of five (5) InGaP HBT processes are in production, each tailored to provide an optimum performance (high power and superior linearity) for a unique application in the cellular handset, wireless communication and base station markets.

Several GaAs HEMT foundry processes are also in production for applications from low cost handset switches, PAs and LNA up to 40GHz, to high linearity an high power PAs. GaN-on-Silicon process for high power RF PAs is also qualified for production.

 

Technology Process Application
InGaP HBT P1 High Linearity & High Power RF Cellular Handset, Wifi, WiMAX, Infrastructure PAs
P2 High Linearity & High Power RF Cellular Handset, Wifi, WiMAX, Infrastructure PAs
P3 High Gain, High Linearity & High Power RF Cellular Handset, Wifi (802.11 AC), WiMax, Infrastructure PAs
P5 High Ruggedness & High Power RF Cellular GSM/DCS Handset, Wifi, WiMAX, Infrastructure PAs
P6 High Power RF Infrastructure PAs
P7 High Power RF Infrastructure PAs at 12V bias
D1 Ultra Low Phase Noise Voltage Controlled Oscillator (VCO)
D5 Ultra Low Phase Noise Voltage Controlled Oscillator (VCO) & Wide Tuning Bandwidth
GaAs HEMT 0.5um Switch Low-cost Handset Switch
0.5/0.25um Power PA and LNA up to 40 GHz
E/D-mode PHEMT Integrated Multifunction ICs
0.5/0.25um HFET High Linearity & High Power RF Infrastructure PAs
0.25um Low Noise Super Low Noise LNAs
RF Passive High Q RF Passive Filter and Matching/Bias Network
GaN HEMT 0.5/0.25um GaN/Si High Voltage & High Power RF Infrastructure PAs (Customer Proprietary Process)
0.5um GaN/SiC High Voltage & High Power RF Infrastructure PAs