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GaAs & GaN RF Technologies
InGaP HBT
Super High ƒmax HBT
GaAs pHEMT
HFET
GaN/SiC HEMT
Integrated Passive Devices
THz Schottky Diode
Varactor Diode
InP HBT Technologies
GaN/SiC HEMT Technologies
BAW Technologies
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  Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies
 
GaAs & GaN RF Technologies
   
 

Serving the RFIC/MMIC industry, GCS offers a wide portfolio of process technologies such as InGaP HBT, InP HBT, pHEMT, HFET, GaN HEMT, THz Mixer Diode and Integrated Passive Devices (IPD) to enhance our customers’ product performance and market competitiveness. A family of InGaP HBT processes are in production, each tailored to provide an optimum performance (high power and superior linearity) for a unique application in the cellular handset, wireless communication and base station markets.

Several GaAs HEMT foundry processes are also in production for applications from low cost handset switches, PAs and LNA up to 40GHz, to high linearity an high power PAs. GaN-on-Silicon process for high power RF PAs is also qualified for production.

 

Technology Process Application
GaN HEMT 0.4 um GaN/SiC Wideband High Power Amplfier
0.25 um GaN/SiC High Frequency High Power Amplfier, Sub-6 GHz MIMO
0.15 um GaN/SiC mmW Frequency Amplifier, up to Ka-Band
(6") 0.25 um GaN/Si Wideband PA for Low-Voltage Mobile, BTS & Phase Array Tx IC Up to K-Band
(6") 0.15 GaN/Si PA for Phase Array Tx IC up to 30 GHz
Super-High ƒmax HBT SD2 and SPD mmW 5G Amplfiers (ex 14 GHz, 28 GHz, 39 GHz)
InGaP HBT P2 High Linearity for Handset and WLAN PAs
P3 High Linearity/high gain for Handset/802.11ac/ 5G PAs
P5 High Ruggedness for GSM/DCS PAs
P7 Small Cell Infrastructure PAs
D1 Low Phase Noise VCO
D5 Wide tuning range Low Phase Noise VCO, Voltage Tunable MMIC Filters
InP HBT DHBT1 High-Voltage Analog and RF ICs
DHBT2 Super-high-speed ICs
DHBT3
DHBT5 5G PA at mm-wave Frequency
GaAs pHEMT 0.5 um Power pHEMT PA and LNA up to 20GHz
E/D-Mode pHEMT Integrated Multifunction ICs
0.25 um Power pHEMT Amplifiers up to 40 GHz
0.25 um Low Noise pHEMT Low Noise Receiver up to Ka-Band
0.1 um LN/Power pHEMT Low Noise & Power Amplifier
0.5 um HFET High Linearity for WiMAX and Infrastructure PAs
0.25 um HFET
RF Diodes THz Low Loss Mixer up to mmW Frequencies
Varactor Wide Capacitance Tuning Range For 5G Beam Forming Network
RFPIN RF Switches
RF Passives High-Q LCR on GaAs Filter and Matching/Bias Network
BAW Filter 6" BAW Resonator (AlN and ScAlN) High Performance RF Filter up to 10 GHz