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  Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies> GaN/SiC HEMT
 
BAW Technologies
   
 
BAW Filter Process
  • AlN and ScAlN BAW Resonator Technology
  • Ideal for High Performance RF Filters in Mobile Communication Systems
  • Low Cost and High Volume Manufacturing
  • Wafer Level Packaging (WLP) Available

Typical Applications
  • Commercial: 4G LTE, Sub-6 GHz 5G, WiFi-6E, WiFi-7 Filters
  • Defense/Aerospace: X-band Filter

Process Features
  • Unique patent-protected BAW process
  • AlN resonators for narrowband filters:
    • Keff2 of 6%
    • Q-factor up to 3000
    • Frequency up to 8 GHz
  • ScAlN resonators for wideband filters:
    • Keff2 of 20%
    • Q-factor up to 1800
    • Frequency up to 7.5 GHz
  • Frequency trimming accuracy: +/- 0.1%
  • High power-handling capabilities:
    • 45 dBm at 2.5 GHz
    • 35 dBm at 5 GHz
  • Wafer level packaging

Resonator Performance

2.4 GHz ScAlN Demonstration Filter

5.7 GHz ScAlN Demonstration Filter