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  Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies> GaAs PHEMT > 0.5um D-Mode T-Gate PHEMT
 
0.5um D-Mode T-Gate PHEMT
   
 
0.5 um D-Mode T-Gate PHEMT process has been developed for transceiver components (such as high power amplifier, gain block, low noise amplifier, switches and mixers) of up to 20 GHz.

0.5 um D-Mode T-Gate PHEMT process has been developed for transceiver components (such as high power amplifier, gain block, low noise amplifier, switches and mixers) of up to 20 GHz.

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Typical Device Parameters

Parameter

Typical Value

Idsmax (mA/mm)

520

Idss (mA/mm)

300

Gm (mS/mm)

350

Vpo (V)

-1.0

BVgd (V)

>15

Ft (GHz)

33

Fmax (GHz)

90

Noise Figure @ 10GHz

< 0.9