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		公司简介 质量政策声明 环宇沿革 业务联系 专业技术 专业技术总览 GaAs & GaN RF Technologies InGaP HBT High Linearity InGaP HBT High Voltage and GSM InGaP HBT VCO InGaP HBT GaAs PHEMT 0.5um D-Mode T-Gate PHEMT 0.5um Switch PHEMT 0.5um E/D-mode PHEMT 0.25um D-Mode T-Gate PHEMT Power Process HFET GaN HEMT Integrated Passive Devices THz Schottky Diode InP HBT Technologies GaN Power Electronics Technologies GaN Technologies Optoelectronics Technologies 晶圆制造服务 GaAs & GaN RF Wafer Foundry InP HBT Wafer Foundry OPTOELECTRONICS Wafer Foundry Customer Proprietary Process Manufacturing Manufacturing Capabilities Processing Capabilities Testing Capabilities Foundry Support Foundry Support Flow MPW Support Process Design Kit CAD Tools and Support Testing Services Foundry Training Foundry Partners 砷化镓及砷化铟镓光探测器与光探测器阵列 雪崩光电二极管 垂直腔表面发射激光器（VCSEL）晶片及晶片阵列 业务代表 财务资讯 每月营业额报告 每季营业额报告 历年财务报表 公司年报 股东服务 股价查询 联络人 法说会 台湾证券交易所公开资讯观测站 (MOPS) 公司治理 董事会 审计及薪酬委员会
Pure-play Wafer Foundry   Pure-play Wafer Foundry Technology Overview GaAs & GaN RF Technologies InP HBT Technologies GaN/SiC HEMT Technologies BAW Technologies Optoelectronics Technologies Foundry Services   Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies> GaN/SiC HEMT   GaN/SiC HEMT       0.25/0.4/0.15µm GaN HEMT Process Wide band-gap GaN HEMT A Combination of high power density, high efficiency, and wide bandwidth Ideal for 5G wireless infrastructure and radar applications (PA and switches) 15, 28, 48, and 85V PA operations Typical Applications: 5G wireless infrastructures Amplifiers with DPD for FDD, TDD conditions Military/commercial radar Military electronic warfare (EW) 5G Doherty amplifier Features: 0.15/0.25/0.4 µm T-Gate lithography - with source/gate field plates Psat: ~6 W/mm @ Vds = 28 V Psat: ~11 W/mm @ Vds = 48 V High drain efficiency: > 80% High breakdown voltage: > 200 V Excellent thermal conductivity Options of round or slot through-wafer vias Typical GaN Device Performance: Parameter 0.15um 0.4um 0.25um Imax (mA/mm) 1150 1190 1200 Idss(mA/mm) 910 730 750 Gm (mS/mm) 343 300 330 Vp (V) -3 -2.6 -2.4 BVgd (V) 80 >200 >150 MAG @ 2.0 GHz (dB) 16 >24 >26 ƒT(GHz) 42 19 23 ƒmax(GHz) 170 62 100 Pout (W/mm)@3.5 GHz,Vds-48V N/A 13.5 11.0 PAE(%)@3.5GHz, Vds-48V N/A 81.0 79 Pout (W/mm)@15 GHz,Vds-28V N/A N/A 4.0 PAE(%)@15GHz, Vds-28V N/A N/A 45 Pout (W/mm)@10 GHz,Vds-48V N/A 10.3 10.8 Max. Drain Eff. (%) @10 GHz,Vds-48V N/A 57 65 Nfmin@10 GHz -28V N/A 1.15dB 1.1dB MXP Psat (W/mm) @ 18GHz, Vds = 28V 5 N/A N/A MXE PAE (%) @ 18GHz, Vds = 28V 60 N/A N/A MXP Psat (W/mm) @ 30GHz, Vds = 28V 4.6 N/A N/A MXE PAE (%) @ 30GHz, Vds = 28V 49 N/A N/A NFmin (dB) @ 18GHz, Vds = 20V 0.77 N/A N/A *Measured at 2 GHz 0.15um GaN/SiC HEMT: 0.25um GaN/SiC HEMT: 0.4um GaN/SiC HEMT: Available Round & Slot Through Wafer Vias: