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专业晶圆制造服务
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GaAs & GaN RF Technologies
InGaP HBT
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0.5um D-Mode T-Gate PHEMT
0.5um Switch PHEMT
0.5um E/D-mode PHEMT
0.25um D-Mode T-Gate PHEMT Power Process
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0.5um Switch PHEMT
   
 

GCS has developed a low-cost, high-performance PHEMT process specifically for cell phone and WLAN RF Switch and LNA applications. The process was designed with multiple gates to achieve low insertion, high isolation and low harmonics. Semiconductor resistor and MIM capacitor are included. The process has been qualified and in production since 2003.

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0.5um Switch PHEMT