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		公司简介 质量政策声明 环宇沿革 业务联系 专业技术 专业技术总览 GaAs & GaN RF Technologies InGaP HBT High Linearity InGaP HBT High Voltage and GSM InGaP HBT VCO InGaP HBT GaAs PHEMT 0.5um D-Mode T-Gate PHEMT 0.5um Switch PHEMT 0.5um E/D-mode PHEMT 0.25um D-Mode T-Gate PHEMT Power Process HFET GaN HEMT Integrated Passive Devices THz Schottky Diode InP HBT Technologies GaN Power Electronics Technologies GaN Technologies Optoelectronics Technologies 晶圆制造服务 GaAs & GaN RF Wafer Foundry InP HBT Wafer Foundry OPTOELECTRONICS Wafer Foundry Customer Proprietary Process Manufacturing Manufacturing Capabilities Processing Capabilities Testing Capabilities Foundry Support Foundry Support Flow MPW Support Process Design Kit CAD Tools and Support Testing Services Foundry Training Foundry Partners 砷化镓及砷化铟镓光探测器与光探测器阵列 雪崩光电二极管 垂直腔表面发射激光器（VCSEL）晶片及晶片阵列 业务代表 财务资讯 每月营业额报告 每季营业额报告 历年财务报表 公司年报 股东服务 股价查询 联络人 法说会 台湾证券交易所公开资讯观测站 (MOPS) 公司治理 董事会 审计及薪酬委员会
Pure-play Wafer Foundry   Pure-play Wafer Foundry Technology Overview GaAs & GaN RF Technologies InP HBT Technologies GaN/SiC HEMT Technologies BAW Technologies Optoelectronics Technologies Foundry Services   Home > Pure-play Wafer Foundry > Technology > GaAs & GaN RF Technologies> GaN/SiC HEMT   BAW Technologies       BAW Filter Process AlN and ScAlN BAW Resonator Technology Ideal for High Performance RF Filters in Mobile Communication Systems Low Cost and High Volume Manufacturing Wafer Level Packaging (WLP) Available Typical Applications Commercial: 4G LTE, Sub-6 GHz 5G, WiFi-6E, WiFi-7 Filters Defense/Aerospace: X-band Filter Process Features Unique patent-protected BAW process AlN resonators for narrowband filters: Keff2 of 6% Q-factor up to 3000 Frequency up to 8 GHz ScAlN resonators for wideband filters: Keff2 of 20% Q-factor up to 1800 Frequency up to 7.5 GHz Frequency trimming accuracy: +/- 0.1% High power-handling capabilities: 45 dBm at 2.5 GHz 35 dBm at 5 GHz Wafer level packaging Resonator Performance 2.4 GHz ScAlN Demonstration Filter 5.7 GHz ScAlN Demonstration Filter