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  Home > Pure-play Wafer Foundry > Foundry Services > InP HBT Wafer Foundry
 
InP HBT Wafer Foundry
   
 
InP HBT Wafer Foundry InP HBT Wafer Foundry InP HBT Wafer Foundry

 

GCS offers InP HBT processes, which enable very high speed mixed-signal ICs both for test instruments and for 40-100G Transimpedance Amplifiers (TIAs) used in optical fiber communication applications. Two generations (4 processes) of InP HBT technologies have been developed with fT from 180 GHz to 300 GHz. Superior performance has been demonstrated by customers and qualified products have been in production since 2007.

 

HBT Parameters   SHBT1 DHBT1 DHBT2 DHBT3 DHBT3B
Emitter width (um) 1 1 0.8 0.8 0.6
Typical operating current density Jctyp (mA/µm2) 1 1 2 2 2
Maximum operating current density Jcmax (mA/µm2) 2 2 3 3 3
Typical operating voltage Vce (V) 1 1.5 1.5 1 1
Base-collector breakdown voltage BVcbo (V) 6 8 5.5 4.5 4.5
Collector-emitter breakdown voltage BVceo (V) 3.5 7 4.5 3.8 3.8
Emitter-base breakdown voltage BVebo (V) 3.2 3.2 3.2 3.2 3.2
Thermal resistance Rth (°C/mW) 9.9 5.3 5.3 5.3 5.3
fT (at max allowed operating current) (GHz) 170 150 240 290 320
fmax (at max allowed operating current) (GHz) 200 180 200 250 330

 

Passive Element Parameters Typical Value
TaN TFR Sheet Resistance (Ohm/sq) 50
MIM Unit Capacitance (fF/µm2) 0.38
MIM Capacitance Breakdown Voltage (V) -
Backside Vias Optional

 

InP HBT Wafer Foundry

60 GHz TIA (courtesy of SMDI)

InP HBT Wafer Foundry

90 GHz Static Divider
(courtesy of Inphi Corp.)