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  Home > Pure-play Wafer Foundry > Technology > InP HBT Technologies
 
InP HBT Technologies
   
 

InP HBT TechnologiesFor very high speed mixed-signal ICs for test instruments and and 40-100G Transimpedance Amplifier (TIA) for optical fiber communication applications, two generations (4 processes) of InP HBT technologies have been developed with Ft from 180 GHz to 300 GHz. Superior performance has been demonstrated by customers and several has been in production since 2007.

 

 

HBT Parameters   SHBT DHBT1 DHBT2 DHBT3
Emitter Size   1umx3um 1umx3um 0.8umx3um 0.8umx3um
Typical operating current density Jc(typ) 1mA/mm2 1 mA/mm2 2 mA/mm2 2 mA/mm2
Maximum operating current density Jc(max) 2 mA/mm2 2 mA/mm2 3 mA/mm2 3 mA/mm2
Typical operating voltage Vce 1 V 1.5V 1.5 V 1 V
Base-collector breakdown voltage BVcbo 4 V 8 V 5.5 V 4.5 V
Collector-emitter breakdown voltage BVceo 3.5 V 7 V 4.5 V 3.8 V
Emitter-base breakdown voltage BVebo 2 V 2 V 2 V 2 V
Thermal resistance Rth 9.9°C/mW 5.3°C/mW 5.3°C/mW 5.3°C/mW
fT (at Max allowed operating current)   180GHz 150 GHz 250 GHz 300 GHz
fmax (at Max allowed operating current)   180 GHz 150 GHz 240 GHz 250 GHz