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  Home > Pure-play Wafer Foundry > Technology > InP HBT Technologies
 
InP HBT Technologies
   
 

InP HBT Technologies

For very high speed mixed-signal ICs for test instruments and and 40-100G Transimpedance Amplifier (TIA) for optical fiber communication applications, two generations (4 processes) of InP HBT technologies have been developed with fT from 180 GHz to 300 GHz. Superior performance has been demonstrated by customers and several has been in production since 2007.

 

HBT Parameters   SHBT1 DHBT1 DHBT2 DHBT3 DHBT3B
Emitter width (um) 1 1 0.8 0.8 0.6
Typical operating current density Jctyp (mA/µm2) 1 1 2 2 2
Maximum operating current density Jcmax (mA/µm2) 2 2 3 3 3
Typical operating voltage Vce (V) 1 1.5 1.5 1 1
Base-collector breakdown voltage BVcbo (V) 6 8 5.5 4.5 4.5
Collector-emitter breakdown voltage BVceo (V) 3.5 7 4.5 3.8 3.8
Emitter-base breakdown voltage BVebo (V) 3.2 3.2 3.2 3.2 3.2
Thermal resistance Rth (°C/mW) 9.9 5.3 5.3 5.3 5.3
fT (at max allowed operating current) (GHz) 170 150 240 290 320
fmax (at max allowed operating current) (GHz) 200 180 200 250 330

DHBT5
  • DHBT5 InP HBT technology is ideal for 5G PA applications at mm-wave frequency
  • High breakdown voltage
  • High power density, high gain and efficiency, good linearity
  • Proven reliability
  • Available for immediate design

Typical Applications:
  • mm-wave MMICs:
    • 5G power amplifier
    • Integrated IC with digital control

Features:
  • High fT and fmax
  • High power density
  • Positive bias voltage
  • Can add digital functions

DHBT5 device performance:


DHBT5 PA performance: