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InGaP HBT
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  Home > Pure-play Wafer Foundry > GaAs & GaN RF Technologies > InGaP HBT > High Linearity InGaP HBT
 
InGaP HBT
   
 

GCS offers two digital processes (D1 and D5), providing high FT, very low phase noise, integrated varactor and Schottky diodes, ideal for applications such as VCO, tunable filters, and low phase noise amplifiers.



Parameter Unit D1
(High FT)
D5
Applications   VCO, High-speed Digital and Mixed-signal ICs Wide Tuning Range VCO, Voltage Tunable MMIC Filters
Current Gain   150 150
BVceo@ KA/cm2 V 7.5 6.5
BVcbo@ KA/cm2 V 17 29
&402;T/&402;max GHz 60/65 42/55
Schottky Diode   Yes Yes
Performance Example   VCO, fo=4.990 to 5.154GHz, Po=9.5Bm,  PN=105dBc/Hz @100KHz offset VCO, PN= 105dBc/Hz @100KHz offset,
C/V Tuning Ratio = 5:1