Site Map | English / 繁中 / 简中
   
  Pure-play Wafer Foundry
 
Pure-play Wafer Foundry
Technology
Overview
GaAs Technologies
InGaP HBT
High Linearity InGaP HBT
High Voltage and GSM InGaP HBT
VCO InGaP HBT
Super High fmax HBT
GaAs pHEMT
GaN/SiC HEMT
Integrated Passive Devices
THz Schottky Diode
Varactor Diode
InP HBT Technologies
GaN/SiC HEMT Technologies
Optoelectronics Technologies
Foundry Services
  Home > Pure-play Wafer Foundry > GaAs Technologies > InGaP HBT > High Linearity InGaP HBT
 
InGaP HBT
   
 

GCS offers two digital processes (D1 and D5), providing high FT, very low phase noise, integrated varactor and Schottky diodes, ideal for applications such as VCO, tunable filters, and low phase noise amplifiers.



Parameter Unit D1
(High FT) 		D5
Applications   VCO, High-speed Digital and Mixed-signal ICs Wide Tuning Range VCO, Voltage Tunable MMIC Filters
Current Gain   150 150
BVceo@ 2A/cm2 V 7.5 7.0
BVcbo@ 2A/cm2 V 17 29
Ft at 50KA/cm2 GHz 55 42
Fmax at 50KA/cm2 GHz 65 55
Schottky Diode   Yes Yes
Performance Example   VCO, fo=4.990 to 5.154GHz, Po=9.5Bm,　　PN=105dBc/Hz @100KHz offset VCO, PN= 105dBc/Hz @100KHz offset,
C/V Tuning Ratio = 5:1